Datasheet Summary
isc Silicon NPN Darlington Power Transistor
DESCRIPTION
- High DC Current Gain-
: hFE = 1000(Min)@ IC= 1A
- Collector-Emitter Breakdown Voltage-
: V(BR)CEO = 100V(Min)
- Low Collector-Emitter Saturation Voltage-
: VCE(sat) = 1.5V(Max)@ IC= 1A
- Minimum Lot-to-Lot variations for robust device performance and reliable operation
APPLICATIONS
- Designed for low frequency power amplifier...
