Inchange Semiconductor 2SD1638
The information contained herein is presented only as a guide for the applications of our products. The products are not designed for use in equipment which require specialized quality and/or reliability, or in equipment which could have applications in hazardous environments, aerospace industry, or medical field.| Part No. | 2SD1638 |
|---|---|
| Datasheet | 2SD1638 Download |
| Manufacturer |  Inchange Semiconductor |
| Description | NPN Transistor |
| Buy | Stock & Price |
DESCRIPTION
●High DC Current Gain- : hFE = 1000(Min)@ IC= 1A●Collector-Emitter Breakdown Voltage- : V(BR)CEO = 100V(Min)
●Low Collector-Emitter Saturation Voltage- : VCE(sat) = 1.5V(Max)@ IC= 1A
●Minimum Lot-to-Lot variations for robust device performance and reliable operation
APPLICATIONS
●Designed for low frequency power amplifier applications.ABSOLUTE MAXIMUM RATINGS
(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 100 V VCEO Collector-Emitter Voltage 100 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous 2 A ICM Collector Current-Peak Collector Power Dissipation TC=25℃ PC Collector Power Dissipation Ta=25℃ Tj Junction Temperature 3 A 15 W 1.2 150 ℃ Tstg Storage Temperature Range -55~150 ℃ 2SD1638 isc website： 1 isc & iscsemi is registered trademark isc Silicon NPN Darlington Power Transistor 2SD1638ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage I...