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2SD1647 - NPN Transistor

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Description

Low Collector-Emitter Saturation Voltage- : VCE(sat) = 1.5V(Max)@ IC= 1A High DC Current Gain : hFE= 1000(Min) @IC= 1.0A Low Saturation Voltage 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed

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Datasheet Details

Part number 2SD1647
Manufacturer INCHANGE
File Size 199.41 KB
Description NPN Transistor
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INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor 2SD1647 DESCRIPTION ·Low Collector-Emitter Saturation Voltage- : VCE(sat) = 1.5V(Max)@ IC= 1A ·High DC Current Gain : hFE= 1000(Min) @IC= 1.0A ·Low Saturation Voltage ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for general purpose amplifier and low frequency power Amp applications.
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