Inchange Semiconductor 2SD1647
The information contained herein is presented only as a guide for the applications of our products. The products are not designed for use in equipment which require specialized quality and/or reliability, or in equipment which could have applications in hazardous environments, aerospace industry, or medical field.| Part No. | 2SD1647 |
|---|---|
| Datasheet | 2SD1647 Download |
| Manufacturer |  Inchange Semiconductor |
| Description | NPN Transistor |
| Buy | Stock & Price |
DESCRIPTION
●Low Collector-Emitter Saturation Voltage- : VCE(sat) = 1.5V(Max)@ IC= 1A●High DC Current Gain : hFE= 1000(Min) @IC= 1.0A
●Low Saturation Voltage
●100% avalanche tested
●Minimum Lot-to-Lot variations for robust device performance and reliable operation
APPLICATIONS
●Designed for general purpose amplifier and low frequency power Amp applications.ABSOLUTE MAXIMUM RATINGS
(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 50-70 V VCEO Collector-Emitter Voltage 50-70 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous 2 A ICP Collector Current-Peak PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature Tstg Storage Temperature Range 3 A 25 W 150 ℃ -55~150 ℃ isc website： 1 isc & iscsemi is registered trademark INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor 2SD1647ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 5mA, IB= 0 V(BR)CBO Collector-Base Breakdown Voltage IC= 100μA, IE= 0 MIN TYP.