Datasheet Details
| Part number | 2SD1649 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 210.93 KB |
| Description | NPN Transistor |
| Datasheet | 2SD1649-INCHANGE.pdf |
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Overview: isc Silicon NPN Power Transistor.
| Part number | 2SD1649 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 210.93 KB |
| Description | NPN Transistor |
| Datasheet | 2SD1649-INCHANGE.pdf |
|
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·High Breakdown Voltage- : VCBO= 1500V (Min) ·High Switching Speed ·High Reliability ·Built-in Damper Diode ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for color TV horizontal deflection output applicaitions.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1500 V VCEO Collector-Emitter Voltage 800 V VEBO Emitter-Base Voltage 6 V IC Collector Current- Continuous 2.5 A ICP Collector Current-Peak PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 10 A 50 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ 2SD1649 isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA;
RBE= ∞ V(BR)CBO Collector-Base Breakdown Voltage IC= 5mA;
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| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
2SD1649 | SILICON POWER TRANSISTOR | SavantIC |
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