Inchange Semiconductor 2SD1706
The information contained herein is presented only as a guide for the applications of our products. The products are not designed for use in equipment which require specialized quality and/or reliability, or in equipment which could have applications in hazardous environments, aerospace industry, or medical field.| Part No. | 2SD1706 |
|---|---|
| Datasheet | 2SD1706 Download |
| Manufacturer |  Inchange Semiconductor |
| Description | Silicon NPN Power Transistor |
| Buy | Stock & Price |
DESCRIPTION
●Collector-Emitter Breakdown Voltage- : V(BR)CEO= 80V(Min)●Good Linearity of hFE
●Low Collector Saturation Voltage- : VCE(sat)= 0.5V(Max.)@ IC= 7A
●Complement to Type 2SB1155
●Minimum Lot-to-Lot variations for robust device performance and reliable operation
APPLICATIONS
●Designed for power switching applicationsABSOLUTE MAXIMUM RATINGS
(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 130 V VCEO Collector-Emitter Voltage 80 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 15 A ICP Collector Current-Pulse Collector Power Dissipation @ TC=25℃ PC Collector Power Dissipation @ Ta=25℃ TJ Junction Temperature 25 A 80 W 3 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website： 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor 2SD1706ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA; IB= 0 VCE(sat)-1 Collector-Emitter Saturation Vo...