Datasheet Details
| Part number | 2SD1717 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 211.75 KB |
| Description | NPN Transistor |
| Datasheet | 2SD1717-INCHANGE.pdf |
|
|
Overview: isc Silicon NPN Power Transistor 2SD1717.
| Part number | 2SD1717 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 211.75 KB |
| Description | NPN Transistor |
| Datasheet | 2SD1717-INCHANGE.pdf |
|
|
|
·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 160V(Min.) ·Good Linearity of hFE ·Wide Area of Safe Operation ·Complement to Type 2SB1162 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for high power amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 160 V VCEO Collector-Emitter Voltage 160 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 12 A ICP Collector Current-Pulse Collector Power Dissipation @ TC=25℃ PC Collector Power Dissipation @ Ta=25℃ TJ Junction Temperature 20 A 120 W 3.5 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor 2SD1717 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCE(sat) Collector-Emitter Saturation Voltage IC= 8A;
IB= 0.8A VBE(on) Base -Emitter On Voltage IC= 8A;
Compare 2SD1717 distributor prices and check real-time stock availability from major suppliers. Prices and inventory may vary by region and order quantity.
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
2SD1717 | SILICON POWER TRANSISTOR | SavantIC |
| Part Number | Description |
|---|---|
| 2SD1710 | NPN Transistor |
| 2SD1712 | NPN Transistor |
| 2SD1715 | NPN Transistor |
| 2SD1718 | NPN Transistor |
| 2SD1705 | NPN Transistor |
| 2SD1707 | NPN Transistor |
| 2SD1729 | NPN Transistor |
| 2SD1739 | NPN Transistor |
| 2SD1762 | NPN Transistor |
| 2SD1763 | NPN Transistor |