Datasheet Summary
isc Silicon NPN Power Transistor
DESCRIPTION
- Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 180V(Min.)
- Good Linearity of hFE
- Wide Area of Safe Operation
- plement to Type 2SB1163
- Minimum Lot-to-Lot variations for robust device performance and reliable operation
APPLICATIONS
- Designed for high power amplifier...
