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2SD1783 - NPN Transistor

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Part number 2SD1783
Manufacturer INCHANGE
File Size 181.55 KB
Description NPN Transistor
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Description

Collector-Emitter Breakdown Voltage- : V(BR)CEO= 60V(Min) High DC Current Gain : hFE= 2000(Min) @IC= 2A Low Saturation Voltage Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use as complementary AF push-pull output stage applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 60 V VEBO Emitter-Base Voltage 5 V

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