| Part number | 2SD1783 |
|---|---|
| Datasheet | 2SD1783-INCHANGE.pdf |
| File Size | 181.55 KB |
| Manufacturer | Inchange Semiconductor |
| Description | NPN Transistor |
|
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·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 60V(Min) ·High DC Current Gain : 1 isc & iscsemi is registered trademark INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor 2SD1783 TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Breakdown Voltage IC= 30mA;.
| Brand Logo | Part Number | Description | Other Manufacturers |
|---|---|---|---|
 |
2SD1783 | NPN Transistor | ROHM |
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| 2SD1785 | NPN Transistor |
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| 2SD1789 | NPN Transistor |
| 2SD1705 | NPN Transistor |
| 2SD1707 | NPN Transistor |
| 2SD1710 | NPN Transistor |
| 2SD1712 | NPN Transistor |
| 2SD1715 | NPN Transistor |
| 2SD1717 | NPN Transistor |
| 2SD1718 | NPN Transistor |
