Datasheet Details
| Part number | 2SD1785 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 206.98 KB |
| Description | NPN Transistor |
| Datasheet | 2SD1785-INCHANGE.pdf |
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Overview: isc Silicon NPN Darlington Power Transistor 2SD1785.
| Part number | 2SD1785 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 206.98 KB |
| Description | NPN Transistor |
| Datasheet | 2SD1785-INCHANGE.pdf |
|
|
|
·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 120V(Min) ·Collector-Emitter Saturation Voltage- : VCE(sat)= 1.5V(Max) @IC= 2A ·High DC Current Gain : hFE= 2000(Min) @ IC= 3A, VCE= 2V ·plement to Type 2SB1258 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Driver for solenoid, relay and motor, series regulator, and general purpose applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 120 V VCEO Collector-Emitter Voltage 120 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous 6 A ICM Collector Current-Peak 10 A IB Base Current-Continuous PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 1 A 30 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website：.iscsemi.
1 isc & iscsemi is registered trademark isc Silicon NPN Darlington Power Transistor 2SD1785 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP.
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
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2SD1785 | Silicon NPN Transistor | Sanken electric |
| Part Number | Description |
|---|---|
| 2SD1783 | NPN Transistor |
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| 2SD1789 | NPN Transistor |
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| 2SD1710 | NPN Transistor |
| 2SD1712 | NPN Transistor |
| 2SD1715 | NPN Transistor |
| 2SD1717 | NPN Transistor |
| 2SD1718 | NPN Transistor |