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2SD1785 - NPN Transistor

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Part number 2SD1785
Manufacturer INCHANGE
File Size 206.98 KB
Description NPN Transistor
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Description

Collector-Emitter Breakdown Voltage- : V(BR)CEO= 120V(Min) Collector-Emitter Saturation Voltage- : VCE(sat)= 1.5V(Max) @IC= 2A High DC Current Gain : hFE= 2000(Min) @ IC= 3A, VCE= 2V Complement to Type 2SB1258 Minimum Lot-to-Lot variations for robust device performance and r

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