Low Collector Saturation Voltage
High DC Current Gain
High Reliability
Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
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INCHANGE Semiconductor
isc Silicon NPN Darlington Power Transistor
2SD1790
DESCRIPTION ·Low Collector Saturation Voltage ·High DC Current Gain ·High Reliability ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for audio frequency power amplifier and low
speed high current switching industrial use.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCEO
Collector-Emitter Voltage
50-70
V
VCBO
Collector-Base Voltage
50-70
V
VEBO
Emitter-Base Voltage
7
V
IC
Collector Current-Continunous
4
A
ICM
Collector Current-Peak
6
A
IB
Base Current-Continunous
0.3
A
IBM
Base Current-Peak
PC
Collector Power Dissipation @TC=25℃
Tj
Junction Temperature
0.
2SD1790 Datasheet
