2SD1793 - NPN Transistor

Inchange Semiconductor

General Description

Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 100V (Min.) High Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS

speed high current switching industrial use.

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2SD1793 npn transistor by Inchange Semiconductor - Datasheet Preview

Datasheet Details

Part number	2SD1793
Manufacturer	Inchange Semiconductor
File Size	196.66 KB
Description	NPN Transistor
Datasheet	2SD1793 Datasheet

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Other Datasheets by Inchange Semiconductor

Part Number	Description
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INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor 2SD1793 DESCRIPTION ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 100V (Min.) ·High Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for audio frequency power amplifier and low speed high current switching industrial use. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCEO Collector-Emitter Voltage 100 V VCBO Collector-Base Voltage 100 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continunous 10 A ICM Collector Current-Peak 15 A IB Base Current-Continunous 0.5 A IBM Base Current-Peak PC Collector Power Dissipation @TC=25℃ Tj Junction Temperature 1.