2SD1804-T Overview
1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SD1804L-T TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS BVCBO BVCEO Collector-Base Voltage Collector-Emitter Voltage Breakdown IC=0.1mA; RBE=∞ BVEBO Emitter-Base Breakdown Voltage IE=0.1mA;IC=0 VCE(sat) Collector-Emitter Saturation Voltage IC=4A; IB=0.2A VBE(sat) Base-Emitter Saturation Voltage IC= 4A;.

