Datasheet Details
| Part number | 2SD1804 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 208.22 KB |
| Description | NPN Transistor |
| Datasheet | 2SD1804-INCHANGE.pdf |
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Overview: isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SD1804.
| Part number | 2SD1804 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 208.22 KB |
| Description | NPN Transistor |
| Datasheet | 2SD1804-INCHANGE.pdf |
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·Excellent linearity of hFE ·Low Collector-Emitter Breakdown Voltage- : V(BR)CEO= 50 V ·Fast switching time ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Relay drivers, high-speed inverters , converters and Other general high current switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 50 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous Collector Power Dissipation PC Collector Power Dissipation @TC=25℃ TJ Junction Temperature 8 A 1 W 20 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website：.iscsemi.
1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SD1804 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCE(sat) Collector-Emitter Saturation Voltage IC=4A;
IB=0.2A VBE(sat) Base-Emitter Saturation Voltage IC= 4A;
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
2SD1804 | PNP/NPN Epitaxial Planar Silicon Transistors | Sanyo Semicon Device |
 |
2SD1804 | NPN Transistors | Kexin |
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2SD1804 | NPN SILICON TRANSISTOR | UTC |
| Part Number | Description |
|---|---|
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