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2SD1804L-T - NPN Transistor

General Description

Excellent linearity of hFE Low Collector-Emitter Breakdown Voltage- : V(BR)CEO= 50 V Fast switching time Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Relay drivers, high-speed inverters , converters and Other general high c

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isc Silicon NPN Power Transistor DESCRIPTION ·Excellent linearity of hFE ·Low Collector-Emitter Breakdown Voltage- : V(BR)CEO= 50 V ·Fast switching time ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Relay drivers, high-speed inverters , converters and Other general high current switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 50 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous Collector Power Dissipation PC Collector Power Dissipation @TC=25℃ TJ Junction Temperature 8 A 1 W 20 150 ℃ Tstg Storage Temperature Range -55~150 ℃ 2SD1804L-T isc website：www.iscsemi.