2SD1804L-T Description
·Excellent linearity of hFE ·Low Collector-Emitter Breakdown Voltage- : 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS BVCEO Collector-Emitter Breakdown Voltage IC=1mA; RBE=∞ VCE(sat) Collector-Emitter Saturation Voltage IC=4A;.