Datasheet Summary
isc Silicon NPN Power Transistor
DESCRIPTION
- Excellent linearity of hFE
- Low Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 50 V
- Fast switching time
- Minimum Lot-to-Lot variations for robust device performance and reliable operation
APPLICATIONS
- Relay drivers, high-speed inverters , converters and Other general high current switching...
