Datasheet Details
| Part number | 2SD1804L-T |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 201.66 KB |
| Description | NPN Transistor |
| Datasheet | 2SD1804L-T-INCHANGE.pdf |
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Overview: isc Silicon NPN Power Transistor.
| Part number | 2SD1804L-T |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 201.66 KB |
| Description | NPN Transistor |
| Datasheet | 2SD1804L-T-INCHANGE.pdf |
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·Excellent linearity of hFE ·Low Collector-Emitter Breakdown Voltage- : V(BR)CEO= 50 V ·Fast switching time ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Relay drivers, high-speed inverters , converters and Other general high current switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 50 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous Collector Power Dissipation PC Collector Power Dissipation @TC=25℃ TJ Junction Temperature 8 A 1 W 20 150 ℃ Tstg Storage Temperature Range -55~150 ℃ 2SD1804L-T isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS BVCEO Collector-Emitter Breakdown Voltage IC=1mA;
RBE=∞ VCE(sat) Collector-Emitter Saturation Voltage IC=4A;
IB=0.2A VBE(sat) Base-Emitter Saturation Voltage IC= 4A;
Compare 2SD1804L-T distributor prices and check real-time stock availability from major suppliers. Prices and inventory may vary by region and order quantity.
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|---|---|---|---|
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