| Part number | 2SD1804L-T |
|---|---|
| Datasheet | 2SD1804L-T-INCHANGE.pdf |
| File Size | 201.66 KB |
| Manufacturer | Inchange Semiconductor |
| Description | NPN Transistor |
|
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·Excellent linearity of hFE ·Low Collector-Emitter Breakdown Voltage- : 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS BVCEO Collector-Emitter Breakdown Voltage IC=1mA; RBE=∞ VCE(sat) Collector-Emitter Saturation Voltage IC=4A;.
| Brand Logo | Part Number | Description | Other Manufacturers |
|---|---|---|---|
 |
2SD1804 | PNP/NPN Epitaxial Planar Silicon Transistors | Sanyo Semicon Device |
 |
2SD1804 | NPN Transistors | Kexin |
 |
2SD1804 | NPN SILICON TRANSISTOR | UTC |
See all Inchange Semiconductor datasheets
| Part Number | Description |
|---|---|
| 2SD1804 | NPN Transistor |
| 2SD1804-T | NPN Transistor |
| 2SD1803 | TO-252 NPN Transistor |
| 2SD1815 | NPN Transistor |
| 2SD1816L | Silicon NPN Power Transistor |
| 2SD1817 | NPN Transistor |
| 2SD1825 | NPN Transistor |
| 2SD1826 | NPN Transistor |
| 2SD1827 | NPN Transistor |
| 2SD1828 | NPN Transistor |
