Inchange Semiconductor 2SD1816
The information contained herein is presented only as a guide for the applications of our products. The products are not designed for use in equipment which require specialized quality and/or reliability, or in equipment which could have applications in hazardous environments, aerospace industry, or medical field.| Part No. | 2SD1816 |
|---|---|
| Datasheet | 2SD1816 Download |
| Manufacturer |  Inchange Semiconductor |
| Description | Silicon NPN Power Transistor |
| Buy | Stock & Price |
DESCRIPTION
●Excellent linearity of hFE●Small and slim package facilitating compactness of sets
●Low collector-to-emitter saturation voltage
●High fT
●Fast switching speed
●100% avalanche tested
●Minimum Lot-to-Lot variations for robust device performance and reliable operation
APPLICATIONS
●Relay drivers,High speed inverters,converters and other general high-current switching applicationsABSOLUTE MAXIMUM RATINGS
(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO VCEO Collector-Base Voltage Collector-Emitter Voltage 120 V 100 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous 4 A ICP Collector Current-Pulse Collector Power Dissipation @ TC=25℃ PC Collector Power Dissipation @ Ta=25℃ TJ Junction Temperature 8 A 20 W 1.0 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website： 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SD1816ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCE(sat) Co...
