Datasheet Details
| Part number | 2SD1826 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 206.05 KB |
| Description | NPN Transistor |
| Datasheet | 2SD1826-INCHANGE.pdf |
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Overview: isc Silicon NPN Darlington Power Transistor 2SD1826.
| Part number | 2SD1826 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 206.05 KB |
| Description | NPN Transistor |
| Datasheet | 2SD1826-INCHANGE.pdf |
|
|
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·High DC Current Gain- : hFE= 2000(Min)@ (VCE= 2V, IC= 3.5A) ·Large Current Capability and Wide ASO.
·Complement to Type 2SB1224 APPLICATIONS ·Designed for use in control of motor drivers, printer hammer drivers, relay drivers,and constant-voltage regulators.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 70 V VCEO Collector-Emitter Voltage 60 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous 7 A ICM Collector Current-Peak Collector Power Dissipation @Ta=25℃ PC Collector Power Dissipation @TC=25℃ TJ Junction Temperature 10 A 2 W 25 150 ℃ Tstg Storage Temperature -55~150 ℃ isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Darlington Power Transistor ELECTRICAL CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= 30mA;
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| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
2SD1826 | PNP/NPN Transistors | Sanyo Semicon Device |
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|---|---|
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