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2SD1830 Datasheet NPN Transistor

Manufacturer: Inchange Semiconductor

Overview: isc Silicon NPN Darlington Power Transistor 2SD1830.

General Description

·High DC Current Gain- : hFE= 1500(Min)@ (VCE= 3V, IC= 4A) ·Large Current Capability and Wide ASO.

·plement to Type 2SB1228 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in control of motor drivers, printer hammer drivers, relay drivers,and constant-voltage regulators.

ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 110 V VCEO Collector-Emitter Voltage 100 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous 8 A ICM Collector Current-Peak Collector Power Dissipation @Ta=25℃ PC Collector Power Dissipation @TC=25℃ TJ Junction Temperature 12 A 2 W 30 150 ℃ Tstg Storage Temperature -55~150 ℃ isc website:.iscsemi.

2SD1830 Distributor