Datasheet Details
| Part number | 2SD1840 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 213.39 KB |
| Description | NPN Transistor |
| Datasheet | 2SD1840-INCHANGE.pdf |
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Overview: isc Silicon NPN Power Transistor.
| Part number | 2SD1840 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 213.39 KB |
| Description | NPN Transistor |
| Datasheet | 2SD1840-INCHANGE.pdf |
|
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·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 100V(Min) ·High Current Capability ·Wide Area of Safe Operation ·plement to Type 2SB1230 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for motor drivers, converters and other general high-current switching applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 110 V VCEO Collector-Emitter Voltage 100 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous 15 A ICP Collector Current-Pulse 25 A IB Base Current-Continuous Collector Power Dissipation @ Ta=25℃ PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 5 A 3 W 100 150 ℃ Tstg Storage Temperature Range -55~150 ℃ 2SD1840 isc website：.iscsemi.
1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor 2SD1840 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= 5mA;
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
2SD1840 | PNP / NPN Epitaxial Planar Silicon Transistors | Sanyo Semicon Device |
| Part Number | Description |
|---|---|
| 2SD1845 | Silicon NPN Power Transistor |
| 2SD1846 | NPN Transistor |
| 2SD1847 | Silicon NPN Power Transistor |
| 2SD1848 | NPN Transistor |
| 2SD1849 | NPN Transistor |
| 2SD1803 | TO-252 NPN Transistor |
| 2SD1804 | NPN Transistor |
| 2SD1804-T | NPN Transistor |
| 2SD1804L-T | NPN Transistor |
| 2SD1815 | NPN Transistor |