Datasheet Details
| Part number | 2SD1845 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 211.75 KB |
| Description | Silicon NPN Power Transistor |
| Datasheet | 2SD1845-INCHANGE.pdf |
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Overview: isc Silicon NPN Power Transistor 2SD1845.
| Part number | 2SD1845 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 211.75 KB |
| Description | Silicon NPN Power Transistor |
| Datasheet | 2SD1845-INCHANGE.pdf |
|
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·Collector-Base Breakdown Voltage- : VCBO= 1300V (Min.) ·High Switching Speed ·Built-in Damper Diode ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for horizontal deflection output applications .
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector- Base Voltage 1300 V VCES Collector-Emitter Voltage 1300 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 2.5 A ICM Collector Current-Peak 7 A IB Base Current- Continuous Collector Power Dissipation @ Ta=25℃ PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 1.5 A 3 W 60 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website：.iscsemi.
1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)EBO Emitter-Base Breakdown Voltage IE= 200mA;
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
2SD1845 | Silicon NPN Transistor | Panasonic |
| Part Number | Description |
|---|---|
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