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2SD1856 - NPN Transistor

General Description

High DC Current Gain : hFE= 2000(Min) @IC= 2A Low Collector Saturation Voltgae- : VCE(sat)= 1.5V(Max.)@ IC= 2A Bullt-in damper diode Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed forr Motor，Relay and Solenoid driver

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isc Silicon NPN Darlington Power Transistor INCHANGE Semiconductor 2SD1856 DESCRIPTION ·High DC Current Gain : hFE= 2000(Min) @IC= 2A ·Low Collector Saturation Voltgae- : VCE(sat)= 1.5V(Max.