Datasheet4U Logo Datasheet4U.com

2SD1876 - NPN Transistor

Datasheet Summary

Description

High Breakdown Voltage- VCBO= 1300V (Min) High Speed Switching High Reliability Built-in Damper Diode Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Color TV horizontal deflection output Color display horizontal defl

📥 Download Datasheet

Datasheet preview – 2SD1876

Datasheet Details

Part number 2SD1876
Manufacturer INCHANGE
File Size 211.24 KB
Description NPN Transistor
Datasheet download datasheet 2SD1876 Datasheet
Additional preview pages of the 2SD1876 datasheet.
Other Datasheets by INCHANGE

Full PDF Text Transcription

Click to expand full text
isc Silicon NPN Power Transistor DESCRIPTION ·High Breakdown Voltage- VCBO= 1300V (Min) ·High Speed Switching ·High Reliability ·Built-in Damper Diode ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Color TV horizontal deflection output ·Color display horizontal deflection output ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1300 V VCEO Collector-Emitter Voltage 800 V VEBO Emitter-Base Voltage 6 V IC Collector Current- Continuous 3 A ICP Collector Current-Pulse PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 12 A 50 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ 2SD1876 isc website:www.iscsemi.
Published: |