Inchange Semiconductor 2SD1878
The information contained herein is presented only as a guide for the applications of our products. The products are not designed for use in equipment which require specialized quality and/or reliability, or in equipment which could have applications in hazardous environments, aerospace industry, or medical field.2SD1878 Specifications
- Max Collector Current : 5A
- Terminals : 3
- Collector Emitter Voltage : 800V
- Max Power Dissipation : 60W
- Max Operating Temp : 140°C
Source:
Octopart
| Part No. | 2SD1878 |
|---|---|
| Datasheet | 2SD1878 Download |
| Manufacturer |  Inchange Semiconductor |
| Description | NPN Transistor |
| Buy | Stock & Price |
DESCRIPTION
●High Breakdown Voltage- : VCBO= 1300V (Min)●High Switching Speed
●High Reliability
●Built-in Damper Diode
●Minimum Lot-to-Lot variations for robust device performance and reliable operation
APPLICATIONS
●Color TV horizontal deflection output●Color display horizontal deflection output
ABSOLUTE MAXIMUM RATINGS
(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1300 V VCEO Collector-Emitter Voltage 800 V VEBO Emitter-Base Voltage 6 V IC Collector Current- Continuous 5 A ICP Collector Current-Pulse PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 20 A 60 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ 2SD1878 isc website： 1 isc & iscsemi is registered trademark isc Silicon NPN Power TransistorELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 50mA; IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 4A; IB= 0.8A VBE(sat) Base-Emitter Saturation Voltage I...