2SD1879 Datasheet PDF - INCHANGE NPN Transistor Specs

2SD1879 - NPN Transistor

Datasheet Summary

Description

High Breakdown Voltage- : VCBO= 1300V (Min) High Switching Speed High Reliability Built-in Damper Diode Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Color TV horizontal deflection output Color display horizontal d

Datasheet Details

Part number	2SD1879
Manufacturer	INCHANGE
File Size	211.61 KB
Description	NPN Transistor
Datasheet	2SD1879 Datasheet
Additional preview pages of the 2SD1879 datasheet.

📁 Similar Datasheet

2SD1879 - NPN Triple Diffused Planar Silicon Transistor (Sanyo Semicon Device)

2SD1879 - SILICON POWER TRANSISTOR (SavantIC)

2SD1875 - NPN EPITAXIAL SILICON TRANSISTOR (UTC)

2SD1876 - NPN Triple Diffused Planar Silicon Transistor (Sanyo Semicon Device)

2SD1876 - SILICON POWER TRANSISTOR (SavantIC)

2SD1877 - SILICON POWER TRANSISTOR (SavantIC)

2SD1878 - NPN Triple Diffused Planar Silicon Transistor (Sanyo Semicon Device)

2SD1878 - SILICON POWER TRANSISTOR (SavantIC)

2SD180 - Silicon NPN Power Transistor (Inchange Semiconductor)

2SD1800 - NPN Epitaxial Silicon Transistor (Sanyo Semicon Device)

Full PDF Text Transcription

Click to expand full text

isc Silicon NPN Power Transistor DESCRIPTION ·High Breakdown Voltage- : VCBO= 1300V (Min) ·High Switching Speed ·High Reliability ·Built-in Damper Diode ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Color TV horizontal deflection output ·Color display horizontal deflection output ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1300 V VCEO Collector-Emitter Voltage 800 V VEBO Emitter-Base Voltage 6 V IC Collector Current- Continuous 6 A ICP Collector Current-Pulse Collector Power Dissipation @ Ta=25℃ PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 20 A 3.0 W 60 150 ℃ Tstg Storage Temperature Range -55~150 ℃ 2SD1879 isc website：www.iscsemi.

Published: Sep 21, 2020 |