Datasheet Details
| Part number | 2SD1887 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 212.81 KB |
| Description | NPN Transistor |
| Datasheet | 2SD1887-INCHANGE.pdf |
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Overview: isc Silicon NPN Power Transistor.
| Part number | 2SD1887 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 212.81 KB |
| Description | NPN Transistor |
| Datasheet | 2SD1887-INCHANGE.pdf |
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·High Breakdown Voltage- : VCBO= 1500V (Min) ·High Switching Speed ·High Reliability ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Color TV horizontal deflection output ·Color display horizontal deflection output ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1500 V VCEO Collector-Emitter Voltage 800 V VEBO Emitter-Base Voltage 6 V IC Collector Current- Continuous 10 A ICP Collector Current-Pulse PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 30 A 70 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ 2SD1887 isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 50mA;
IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 8A;
IB= 1.6A VBE(sat) Base-Emitter Saturation Voltage IC= 8A;
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
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2SD1887 | NPN Triple Diffused Planar Silicon Transistor | Sanyo Semicon Device |
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2SD1887 | SILICON POWER TRANSISTOR | SavantIC |
| Part Number | Description |
|---|---|
| 2SD188 | NPN Transistor |
| 2SD1880 | NPN Transistor |
| 2SD1881 | NPN Transistor |
| 2SD1882 | NPN Transistor |
| 2SD1883 | NPN Transistor |
| 2SD1884 | NPN Transistor |
| 2SD1885 | NPN Transistor |
| 2SD1885C | NPN Transistor |
| 2SD1886 | NPN Transistor |
| 2SD1886C | NPN Transistor |