Datasheet Details
| Part number | 2SD1888 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 206.19 KB |
| Description | NPN Transistor |
| Datasheet | 2SD1888-INCHANGE.pdf |
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Overview: isc Silicon NPN Darlington Power Transistor 2SD1888.
| Part number | 2SD1888 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 206.19 KB |
| Description | NPN Transistor |
| Datasheet | 2SD1888-INCHANGE.pdf |
|
|
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·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 120V(Min) ·High DC Current Gain- : hFE= 2000(Min)@ (VCE= 3V, IC= 2A) ·Complement to Type 2SB1339 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for power amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 120 V VCEO Collector-Emitter Voltage 120 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous 6 A ICM Collector Current-Peak Collector Power Dissipation @Ta=25℃ PC Collector Power Dissipation @TC=25℃ TJ Junction Temperature 10 A 2 W 40 150 ℃ Tstg Storage Temperature -55~150 ℃ isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Darlington Power Transistor 2SD1888 ELECTRICAL CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP.
MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= 5mA;
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
2SD1888 | SILICON POWER TRANSISTOR | SavantIC |
| Part Number | Description |
|---|---|
| 2SD188 | NPN Transistor |
| 2SD1880 | NPN Transistor |
| 2SD1881 | NPN Transistor |
| 2SD1882 | NPN Transistor |
| 2SD1883 | NPN Transistor |
| 2SD1884 | NPN Transistor |
| 2SD1885 | NPN Transistor |
| 2SD1885C | NPN Transistor |
| 2SD1886 | NPN Transistor |
| 2SD1886C | NPN Transistor |