Inchange Semiconductor 2SD1889
The information contained herein is presented only as a guide for the applications of our products. The products are not designed for use in equipment which require specialized quality and/or reliability, or in equipment which could have applications in hazardous environments, aerospace industry, or medical field.| Part No. | 2SD1889 |
|---|---|
| Datasheet | 2SD1889 Download |
| Manufacturer |  Inchange Semiconductor |
| Description | NPN Transistor |
| Buy | Stock & Price |
DESCRIPTION
●Collector-Emitter Breakdown Voltage- : V(BR)CEO= 120V(Min)●High DC Current Gain- : hFE= 2000(Min)@ (VCE= 3V, IC= 2A)
●Complement to Type 2SB1340
●Minimum Lot-to-Lot variations for robust device performance and reliable operation
APPLICATIONS
●Designed for power amplifier applications.ABSOLUTE MAXIMUM RATINGS
(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 120 V VCEO Collector-Emitter Voltage 120 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous 6 A ICM Collector Current-Peak Collector Power Dissipation @Ta=25℃ PC Collector Power Dissipation @TC=25℃ TJ Junction Temperature 10 A 2 W 30 150 ℃ Tstg Storage Temperature -55~150 ℃ 2SD1889 isc website： 1 isc & iscsemi is registered trademark isc Silicon NPN Darlington Power Transistor 2SD1889ELECTRICAL CHARACTERISTICS
Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= 5mA; IB= 0 120 V V(BR)CBO Collector-Base Breakdown Vol...