Datasheet Summary
isc Silicon NPN Darlington Power Transistor
DESCRIPTION
- Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 120V(Min)
- High DC Current Gain-
: hFE= 2000(Min)@ (VCE= 3V, IC= 2A)
- plement to Type 2SB1340
- Minimum Lot-to-Lot variations for robust device performance and reliable operation
APPLICATIONS
- Designed for power amplifier...
