2SD1890 - NPN Transistor

Inchange Semiconductor

General Description

Collector-Emitter Breakdown Voltage- : V(BR)CEO= 80V(Min) High DC Current Gain : hFE= 5000(Min) @IC= 2A Low Collector Saturation Voltgae- : VCE(sat)= 2.5V(Max.)@ IC= 2A Complement to Type 2SB1250 Minimum Lot-to-Lot variations for robust device performance and reliable operat

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2SD1890 npn transistor by Inchange Semiconductor - Datasheet Preview

Datasheet Details

Part number	2SD1890
Manufacturer	Inchange Semiconductor
File Size	187.55 KB
Description	NPN Transistor
Datasheet	2SD1890 Datasheet

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INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor 2SD1890 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 80V(Min) ·High DC Current Gain : hFE= 5000(Min) @IC= 2A ·Low Collector Saturation Voltgae- : VCE(sat)= 2.5V(Max.