2SD1911 Description
·High Breakdown Voltage- : VCBO= 1500V (Min) ·High Switching Speed ·High Reliability ·Built-in Damper Diode ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for TV horizontal deflection output applicaitions. 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)EBO...