Datasheet Details
| Part number | 2SD1941 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 211.22 KB |
| Description | NPN Transistor |
| Datasheet | 2SD1941-INCHANGE.pdf |
|
|
Overview: isc Silicon NPN Power Transistor 2SD1941.
| Part number | 2SD1941 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 211.22 KB |
| Description | NPN Transistor |
| Datasheet | 2SD1941-INCHANGE.pdf |
|
|
|
·High Breakdown Voltage- : VCBO= 1500V (Min) ·High Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for CTV/character display horizontal deflection output stage applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1500 V VCEO Collector-Emitter Voltage 650 V VEBO Emitter-Base Voltage 5 V IC Collector Current- Continuous 6 A IC(peak) Collector Current- Peak 7 A IC(surge) Collector Current-Surge PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 16 A 50 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA;
RBE= ∞ V(BR)EBO Emitter-Base Breakdown Voltage IE= 1mA;
IC= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 5A;
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
2SD1941 | SILICON POWER TRANSISTOR | SavantIC |
| Part Number | Description |
|---|---|
| 2SD1940 | NPN Transistor |
| 2SD1910 | NPN Transistor |
| 2SD1911 | NPN Transistor |
| 2SD1913 | NPN Transistor |
| 2SD1923 | NPN Transistor |
| 2SD1933 | NPN Transistor |
| 2SD1958 | NPN Transistor |
| 2SD1959 | NPN Transistor |
| 2SD1966 | NPN Transistor |
| 2SD1975 | NPN Transistor |