| Part number | 2SD1966 |
|---|---|
| Datasheet | 2SD1966-INCHANGE.pdf |
| File Size | 177.41 KB |
| Manufacturer | Inchange Semiconductor |
| Description | NPN Transistor |
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·High Collector-Emitter Breakdown Voltage- : 1 isc & iscsemi is registered trademark INCHANGE Semiconductor isc Silicon NPN Power Transistor TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CBO Collector-Base Breakdown Voltage IC= 100μA ; IE= 0 V(BR)CEO Collector-Emitter Breakdown Voltage IC= 1mA.
See all Inchange Semiconductor datasheets
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| 2SD1910 | NPN Transistor |
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| 2SD1913 | NPN Transistor |
| 2SD1923 | NPN Transistor |
| 2SD1933 | NPN Transistor |
| 2SD1940 | NPN Transistor |
| 2SD1941 | NPN Transistor |
| 2SD1958 | NPN Transistor |
| 2SD1959 | NPN Transistor |
| 2SD1975 | NPN Transistor |
