2SD1966 - NPN Transistor

Inchange Semiconductor

General Description

High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 80V(Min) Good Linearity of hFE Low Saturation Voltage Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for power amplifier applications ABSOLUTE MAXIMUM RATINGS(Ta

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Datasheet Details

Part number	2SD1966
Manufacturer	Inchange Semiconductor
File Size	177.41 KB
Description	NPN Transistor
Datasheet	2SD1966 Datasheet

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isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SD1966 DESCRIPTION ·High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 80V(Min) ·Good Linearity of hFE ·Low Saturation Voltage ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for power amplifier applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 80 V VCEO Collector-Emitter Voltage 80 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 0.7 A ICP Collector Current-Pulse PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 1.5 A 5 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website：www.iscsemi.