2SD1966
Description
High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 80V(Min) Good Linearity of hFE Low Saturation Voltage Minimum Lot-to-Lot variations for robust device performance and reliable operation.
- Part: 2SD1966
- Description: NPN Transistor
- Category: Transistor
- Manufacturer: Inchange Semiconductor
- Size: 177.41 KB