Datasheet Details
| Part number | 2SD2065 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 195.31 KB |
| Description | NPN Transistor |
| Datasheet | 2SD2065-INCHANGE.pdf |
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Overview: isc Silicon NPN Power Transistor.
| Part number | 2SD2065 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 195.31 KB |
| Description | NPN Transistor |
| Datasheet | 2SD2065-INCHANGE.pdf |
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·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 140V(Min) ·Good Linearity of hFE ·Wide Area of Safe Operation ·Complement to Type 2SB1372 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for high power amplifications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 140 V VCEO Collector-Emitter Voltage 140 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 7 A ICP Collector Current-Pulse Collector Power Dissipation @ TC=25℃ PC Collector Power Dissipation @ Ta=25℃ TJ Junction Temperature 12 A 80 W 3 150 ℃ Tstg Storage Temperature Range -55~150 ℃ 2SD2065 isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor 2SD2065 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCE(sat) Collector-Emitter Saturation Voltage IC= 5A;
IB= 0.5A VBE(on) Base -Emitter On Voltage IC= 5A;
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| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
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2SD2065 | Silicon NPN Transistor | Panasonic |
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