Datasheet Details
| Part number | 2SD2107 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 194.30 KB |
| Description | NPN Transistor |
| Datasheet | 2SD2107-INCHANGE.pdf |
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Overview: isc Silicon NPN Power Transistor.
| Part number | 2SD2107 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 194.30 KB |
| Description | NPN Transistor |
| Datasheet | 2SD2107-INCHANGE.pdf |
|
|
|
·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 60V (Min) ·Low Collector Saturation Voltage ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for low frequency power amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 70 V VCEO Collector-Emitter Voltage 60 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 4 A ICM Collector Current-Peak Collector Power Dissipation @ TC=25℃ PC Collector Power Dissipation @ Ta=25℃ TJ Junction Temperature 8 A 25 W 2 150 ℃ Tstg Storage Temperature Range -55~150 ℃ 2SD2107 isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= 30mA ;
RBE= ∞ V(BR)CBO Collector-Base Breakdown Voltage IC= 10μA;
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
2SD2107 | Silicon NPN Transistor | Hitachi Semiconductor |
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