| Part number | 2SD2107 |
|---|---|
| Datasheet | 2SD2107-INCHANGE.pdf |
| File Size | 194.30 KB |
| Manufacturer | Inchange Semiconductor |
| Description | NPN Transistor |
|
|
·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 60V (Min) ·Low Collector Saturation Voltage ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for low frequency power amplifier applications. 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter...
| Brand Logo | Part Number | Description | Other Manufacturers |
|---|---|---|---|
 |
2SD2107 | Silicon NPN Transistor | Hitachi Semiconductor |
See all Inchange Semiconductor datasheets
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| 2SD2101 | NPN Transistor |
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| 2SD2105 | Silicon NPN Darlington Power Transistor |
| 2SD2106 | NPN Transistor |
| 2SD2108 | NPN Transistor |
| 2SD211 | NPN Transistor |
| 2SD2111 | NPN Transistor |
| 2SD2125 | NPN Transistor |
| 2SD2129 | NPN Transistor |
| 2SD213 | NPN Transistor |
