Datasheet Details
| Part number | 2SD2108 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 194.53 KB |
| Description | NPN Transistor |
| Datasheet | 2SD2108-INCHANGE.pdf |
|
|
Overview: isc Silicon NPN Darlington Power Transistor 2SD2108.
| Part number | 2SD2108 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 194.53 KB |
| Description | NPN Transistor |
| Datasheet | 2SD2108-INCHANGE.pdf |
|
|
|
·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 80V(Min) ·Collector-Emitter Saturation Voltage- : VCE(sat)= 1.5V(Max) @IC= 4A ·High DC Current Gain : hFE= 1000(Min) @ IC= 4A, VCE= 3V ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for low frequency power amplifier applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 80 V VCEO Collector-Emitter Voltage 80 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 8 A ICM Collector Current-Peak Collector Power Dissipation @ TC=25℃ PC Collector Power Dissipation @ Ta=25℃ TJ Junction Temperature 12 A 25 W 2 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Darlington Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= 25mA ;
RBE= ∞ V(BR)CBO Collector-Base Breakdown Voltage IC= 0.1mA;
IE= 0 V(BR)EBO Emitter-Base Breakdown Voltage IE= 5mA;
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
2SD2108 | Silicon NPN Transistor | Hitachi Semiconductor |
| Part Number | Description |
|---|---|
| 2SD2101 | NPN Transistor |
| 2SD2104 | NPN Transistor |
| 2SD2105 | Silicon NPN Darlington Power Transistor |
| 2SD2106 | NPN Transistor |
| 2SD2107 | NPN Transistor |
| 2SD211 | NPN Transistor |
| 2SD2111 | NPN Transistor |
| 2SD2125 | NPN Transistor |
| 2SD2129 | NPN Transistor |
| 2SD213 | NPN Transistor |