Datasheet Details
| Part number | 2SD2125 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 198.96 KB |
| Description | NPN Transistor |
| Datasheet | 2SD2125-INCHANGE.pdf |
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Overview: isc Silicon NPN Power Transistor.
| Part number | 2SD2125 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 198.96 KB |
| Description | NPN Transistor |
| Datasheet | 2SD2125-INCHANGE.pdf |
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·High Breakdown Voltage- ：VCBO= 1500V (Min) ·High Switching Speed ·Low Saturation Voltage ·Built-in Damper Diode ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for color TV horizontal output applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1500 V VCEO Collector-Emitter Voltage 600 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 6 A ICM Collector Current-Peak 10 A IB Base Current- Continuous PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 3 A 50 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ 2SD2125 isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)EBO Emitter-Base Breakdown Voltage IE= 200mA;
IC= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 5A;
IB= 1A VBE(sat) Base-Emitter Saturation Voltage IC= 5A;
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
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2SD2125 | SILICON POWER TRANSISTOR | SavantIC |
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