Inchange Semiconductor 2SD2129
The information contained herein is presented only as a guide for the applications of our products. The products are not designed for use in equipment which require specialized quality and/or reliability, or in equipment which could have applications in hazardous environments, aerospace industry, or medical field.| Part No. | 2SD2129 |
|---|---|
| Datasheet | 2SD2129 Download |
| Manufacturer |  Inchange Semiconductor |
| Description | NPN Transistor |
| Buy | Stock & Price |
DESCRIPTION
●Collector-Emitter Breakdown Voltage- : V(BR)CEO= 100V(Min)●Collector-Emitter Saturation Voltage- : VCE(sat)= 1.5V(Max) @IC= 1.5A
●High DC Current Gain : hFE= 2000(Min) @ IC= 1.5A, VCE= 3V
●Minimum Lot-to-Lot variations for robust device performance and reliable operation
APPLICATIONS
●High power switching applications●Hammer driver,pulse motor driver applications
ABSOLUTE MAXIMUM RATINGS
(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 100 V VCEO Collector-Emitter Voltage 100 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 3 A ICM Collector Current-Peak 5 A IB Base Current-Continuous Collector Power Dissipation @ TC=25℃ PC Collector Power Dissipation @ Ta=25℃ TJ Junction Temperature 0.5 A 20 W 2.0 150 ℃ Tstg Storage Temperature Range -55~150 ℃ 2SD2129 isc website： 1 isc & iscsemi is registered trademark isc Silicon NPN Darlington Power Transistor 2SD2129ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP.