Datasheet Details
| Part number | 2SD2129 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 191.33 KB |
| Description | NPN Transistor |
| Datasheet | 2SD2129-INCHANGE.pdf |
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Overview: isc Silicon NPN Darlington Power Transistor.
| Part number | 2SD2129 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 191.33 KB |
| Description | NPN Transistor |
| Datasheet | 2SD2129-INCHANGE.pdf |
|
|
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·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 100V(Min) ·Collector-Emitter Saturation Voltage- : VCE(sat)= 1.5V(Max) @IC= 1.5A ·High DC Current Gain : hFE= 2000(Min) @ IC= 1.5A, VCE= 3V ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·High power switching applications ·Hammer driver,pulse motor driver applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 100 V VCEO Collector-Emitter Voltage 100 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 3 A ICM Collector Current-Peak 5 A IB Base Current-Continuous Collector Power Dissipation @ TC=25℃ PC Collector Power Dissipation @ Ta=25℃ TJ Junction Temperature 0.5 A 20 W 2.0 150 ℃ Tstg Storage Temperature Range -55~150 ℃ 2SD2129 isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Darlington Power Transistor 2SD2129 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP.
MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= 30mA;
IB= 0 100 V VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 1.5A;
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
2SD2129 | Silicon NPN Transistor | Toshiba Semiconductor |
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2SD2129 | SILICON POWER TRANSISTOR | SavantIC |
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