Datasheet Details
| Part number | 2SD2137 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 207.32 KB |
| Description | NPN Transistor |
| Datasheet | 2SD2137-INCHANGE.pdf |
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Overview: isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SD2137.
| Part number | 2SD2137 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 207.32 KB |
| Description | NPN Transistor |
| Datasheet | 2SD2137-INCHANGE.pdf |
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·Silicon NPN triple diffusion planar type ·Complementary to 2SB1417 ·Low Collector to Emitter Saturation Voltage ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·Allowing supply with the radial taping APPLICATIONS ·Designed for power amplifiers ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 60 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous 3 A ICM Collector Current-Pulse 5 A Total Power Dissipation @TC=25℃ 15 PT W Total Power Dissipation @Ta=25℃ 2 TJ Junction Temperature 150 ℃ Tstg Storage Temperature -55~150 ℃ isc website： www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SD2137 ELECTRICAL CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC=30mA, Ib=0 VCE(sat) Collector-Emitter Saturation Voltage IC= 3A;
IB= 0.375A VBE(ON) Base-Emitter On Voltage IC= 3A;
VCE= 4V ICBO Collector Cutoff Current VCB= 60V;
Compare 2SD2137 distributor prices and check real-time stock availability from major suppliers. Prices and inventory may vary by region and order quantity.
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
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2SD2137 | Power Transistors | Panasonic |
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2SD2137A | Power Transistors | Panasonic |
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2SD2137A | Power Transistors | GME |
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