Inchange Semiconductor 2SD2137
The information contained herein is presented only as a guide for the applications of our products. The products are not designed for use in equipment which require specialized quality and/or reliability, or in equipment which could have applications in hazardous environments, aerospace industry, or medical field.2SD2137 Specifications
- Max Collector Current : 3A
- Terminals : 3
- Collector Emitter Voltage : 60V
- Max Power Dissipation : 2W
- Max Operating Temp : 150°C
Source:
Octopart
| Part No. | 2SD2137 |
|---|---|
| Datasheet | 2SD2137 Download |
| Manufacturer |  Inchange Semiconductor |
| Description | NPN Transistor |
| Buy | Stock & Price |
DESCRIPTION
●Silicon NPN triple diffusion planar type●Complementary to 2SB1417
●Low Collector to Emitter Saturation Voltage
●Minimum Lot-to-Lot variations for robust device performance and reliable operation
●Allowing supply with the radial taping
APPLICATIONS
●Designed for power amplifiersABSOLUTE MAXIMUM RATINGS
(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 60 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous 3 A ICM Collector Current-Pulse 5 A Total Power Dissipation @TC=25℃ 15 PT W Total Power Dissipation @Ta=25℃ 2 TJ Junction Temperature 150 ℃ Tstg Storage Temperature -55~150 ℃ isc website： 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SD2137ELECTRICAL CHARACTERISTICS
Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC=30mA, Ib=0 VCE(sat) Collector-Emitter Saturation Voltage IC= 3A; IB= 0.375A VBE(ON)...