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2SD2143 - NPN Transistor

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Description

DC Current Gain -hFE:1000(Min)@ IC= 1A Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 60V(Min) Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in general purpose amplifier and switching applications ABSOLUTE

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Datasheet Details

Part number 2SD2143
Manufacturer INCHANGE
File Size 212.44 KB
Description NPN Transistor
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isc Silicon NPN Power Transistors DESCRIPTION ·DC Current Gain -hFE:1000(Min)@ IC= 1A ·Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 60V(Min) ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in general purpose amplifier and switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 60 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous 2 A ICM Collector Current-Peak 3 A IB Base Current Collector Power Dissipation TC=25℃ PC Collector Power Dissipation Ta=25℃ Tj Junction Temperature 2 A 50 W 2 150 ℃ Tstg Storage Temperature Range -55~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAM
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