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2SD2151 - NPN Transistor

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Description

Low Collector Saturation Voltage : VCE(sat)= 0.5V(Max)@ IC= 6A Collector-Emitter Breakdown Voltage- : V(BR)CEO= 80V (Min) Good Linearity of hFE Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for power switching applic

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Datasheet Details

Part number 2SD2151
Manufacturer INCHANGE
File Size 196.95 KB
Description NPN Transistor
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isc Silicon NPN Power Transistor DESCRIPTION ·Low Collector Saturation Voltage : VCE(sat)= 0.5V(Max)@ IC= 6A ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 80V (Min) ·Good Linearity of hFE ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for power switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 130 V VCEO Collector-Emitter Voltage 80 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 10 A ICM Collector Current-Peak Collector Power Dissipation @ TC=25℃ PC Collector Power Dissipation @ Ta=25℃ TJ Junction Temperature 20 A 30 W 2 150 ℃ Tstg Storage Temperature Range -55~150 ℃ 2SD2151 isc website：www.iscsemi.
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