Datasheet4U Logo Datasheet4U.com

2SD2156 - NPN Transistor

Product Overview

📥 Download Datasheet

Datasheet preview – 2SD2156

Datasheet Details

Part number 2SD2156
Manufacturer INCHANGE
File Size 212.31 KB
Description NPN Transistor
Datasheet download datasheet 2SD2156 Datasheet
Additional preview pages of the 2SD2156 datasheet.

Product details

Description

High DC Current gain Low Collector Saturation Voltage : VCE(sat)= 1.0V(Max)@ IC= 2A Collector-Emitter Breakdown Voltage- : V(BR)CEO= 60V (Min) Good Linearity of hFE 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for power amplification ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO VCEO VEBO IC ICM IB PC TJ Tstg Collector-Base Voltage Collector-Emitter Vol

📁 Similar Datasheet

  • 2SD2156 - Silicon NPN Transistor (Matsushita)
  • 2SD2150 - Transistor (Rohm)
  • 2SD2150 - NPN Transistor (HOTTECH)
  • 2SD2150 - Low Frequency Transistor (GME)
  • 2SD2150 - NPN Transistor (Jiangsu Changjiang Electronics)
  • 2SD2150 - NPN Transistor (Weitron Technology)
  • 2SD2150 - Low Frequency Transistor (Guangdong Kexin Industrial)
  • 2SD2150 - NPN Transistor (SeCoS)
Other Datasheets by INCHANGE
Published: |