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2SD2156 - NPN Transistor

Datasheet Summary

Description

High DC Current gain Low Collector Saturation Voltage : VCE(sat)= 1.0V(Max)@ IC= 2A Collector-Emitter Breakdown Voltage- : V(BR)CEO= 60V (Min) Good Linearity of hFE 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation

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Datasheet Details

Part number 2SD2156
Manufacturer INCHANGE
File Size 212.31 KB
Description NPN Transistor
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isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SD2156 DESCRIPTION ·High DC Current gain ·Low Collector Saturation Voltage : VCE(sat)= 1.
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