| Part number | 2SD2156 |
|---|---|
| Datasheet | 2SD2156-INCHANGE.pdf |
| File Size | 212.31 KB |
| Manufacturer | Inchange Semiconductor |
| Description | NPN Transistor |
|
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·High DC Current gain ·Low Collector Saturation Voltage : VCE(sat)= 1.0V(Max)@ IC= 2A ·Collector-Emitter Breakdown Voltage- : 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SD2156 TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO Collector-Emitter breakdown voltage IC=25mA.
| Brand Logo | Part Number | Description | Other Manufacturers |
|---|---|---|---|
 |
2SD2156 | Silicon NPN Transistor | Matsushita |
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