High DC Current gain
Low Collector Saturation Voltage
: VCE(sat)= 1.0V(Max)@ IC= 2A
Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 60V (Min)
Good Linearity of hFE
100% avalanche tested
Minimum Lot-to-Lot variations for robust device
performance and reliable operation
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isc Silicon NPN Power Transistor
INCHANGE Semiconductor
2SD2156
DESCRIPTION ·High DC Current gain ·Low Collector Saturation Voltage
: VCE(sat)= 1.