Inchange Semiconductor 2SD2161
The information contained herein is presented only as a guide for the applications of our products. The products are not designed for use in equipment which require specialized quality and/or reliability, or in equipment which could have applications in hazardous environments, aerospace industry, or medical field.| Part No. | 2SD2161 |
|---|---|
| Datasheet | 2SD2161 Download |
| Manufacturer |  Inchange Semiconductor |
| Description | Silicon NPN Power Transistor |
| Buy | Stock & Price |
DESCRIPTION
●Collector-Emitter Breakdown Voltage- : V(BR)CEO= 100V(Min)●High DC Current Gain- : hFE= 2000(Min)@ (VCE= 2V, IC= 2A)
●Low Collector Saturation Voltage- : VCE(sat)= 1.5V(Max)@ (IC= 2A, IB= 2mA)
●Minimum Lot-to-Lot variations for robust device performance and reliable operation
APPLICATIONS
●Designed for low-frequency power amplifiers and low- speed switching applications.ABSOLUTE MAXIMUM RATINGS
(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 100 V VCEO Collector-Emitter Voltage 100 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 5 A ICM Collector Current-Peak 10 A IB Base Current-Continuous Collector Power Dissipation @Ta=25℃ PC Collector Power Dissipation @TC=25℃ TJ Junction Temperature 0.5 A 2 W 20 150 ℃ Tstg Storage Temperature -55~150 ℃ 2SD2161 isc website： 1 isc & iscsemi is registered trademark isc Silicon NPN Darlington Power Transistor 2SD2161ELECTRICAL CHARACTERISTICS
Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS...