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2SD2196 - NPN Transistor

Datasheet Summary

Description

High DC Current Gain : hFE= 1500(Min.)@ IC= 10A, VCE= 3V High Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 200V(Min) Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS

Designed for general purpose amplifier applications.

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Datasheet Details

Part number 2SD2196
Manufacturer INCHANGE
File Size 200.14 KB
Description NPN Transistor
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isc Silicon NPN Darlington Power Transistor DESCRIPTION ·High DC Current Gain : hFE= 1500(Min.)@ IC= 10A, VCE= 3V ·High Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 200V(Min) ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for general purpose amplifier applications.
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