2SD2296 Description
·High Breakdown Voltage : 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SD2296 TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNIT V(BR)CBO Collector-Base Breakdown Voltage IC= 1mA; IE= 0 1500 V V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA;.