2SD2333
2SD2333 is NPN Transistor manufactured by Inchange Semiconductor.
DESCRIPTION
- High Breakdown Voltage-
: VCBO= 1500V (Min)
- High Switching Speed
- High Reliability
- Built-in Damper Diode
- Minimum Lot-to-Lot variations for robust device performance and reliable operation
APPLICATIONS
- Designed for horizontal output applicaitions
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
VCEO
Collector-Emitter Voltage
VEBO
Emitter-Base Voltage
Collector Current- Continuous
Base Current- Continuous
Collector Power Dissipation @ TC=25℃
Junction Temperature
℃
Tstg
Storage Temperature Range
-55~150
℃ isc website:.iscsemi.
1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor
INCHANGE...