Datasheet Details
| Part number | 2SD234 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 209.47 KB |
| Description | NPN Transistor |
| Datasheet | 2SD234-INCHANGE.pdf |
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Overview: isc Silicon NPN Power Transistor 2SD234.
| Part number | 2SD234 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 209.47 KB |
| Description | NPN Transistor |
| Datasheet | 2SD234-INCHANGE.pdf |
|
|
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·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 50V(Min) ·Low Collector-Emitter Saturation Voltage- : VCE(sat)= 1.2V(Max) @IC= 3.0A ·Complement to Type 2SB434 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for audio power amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 50 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous Collector Power Dissipation @ Ta=25℃ PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 3.0 A 1.5 W 25 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC=5mA;
IB= 0 V(BR)CBO Collector-base breakdown voltage IC= 1mA;
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
2SD234 | Silicon NPN Power Transistors | SavantIC |
|
2SD2340 | SILICON POWER TRANSISTOR | SavantIC |
 |
2SD2343 | Power Transistor | Rohm |
 |
2SD2345 | Silicon NPN Transistor | Panasonic Semiconductor |
|
2SD2348 | SILICON POWER TRANSISTOR | SavantIC |
| Part Number | Description |
|---|---|
| 2SD2340 | NPN Transistor |
| 2SD2348 | NPN Transistor |
| 2SD2349 | NPN Transistor |
| 2SD2300 | NPN Transistor |
| 2SD2328 | NPN Transistor |
| 2SD2331 | NPN Transistor |
| 2SD2333 | NPN Transistor |
| 2SD2335 | NPN Transistor |
| 2SD235 | NPN Transistor |
| 2SD237 | NPN Transistor |