2SD2340 - NPN Transistor

Inchange Semiconductor

General Description

Collector-Emitter Breakdown Voltage- : V(BR)CEO= 110V(Min) High DC Current Gain : hFE= 5000(Min) @IC= 3A Low Collector Saturation Voltgae- : VCE(sat)= 2.5V(Max.)@ IC= 5A Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Audio，re

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2SD2340 npn transistor by Inchange Semiconductor - Datasheet Preview

Datasheet Details

Part number	2SD2340
Manufacturer	Inchange Semiconductor
File Size	188.11 KB
Description	NPN Transistor
Datasheet	2SD2340 Datasheet

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isc Silicon NPN Darlington Power Transistor INCHANGE Semiconductor 2SD2340 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 110V(Min) ·High DC Current Gain : hFE= 5000(Min) @IC= 3A ·Low Collector Saturation Voltgae- : VCE(sat)= 2.5V(Max.)@ IC= 5A ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Audio，regulator and general purpose. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 130 V VCEO Collector-Emitter Voltage 110 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 6 A ICP Collector Current-Peak Collector Power Dissipation @ Ta=25℃ PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 10 A 2.