Datasheet Summary
isc Silicon NPN Darlington Power Transistor
INCHANGE Semiconductor
DESCRIPTION
- Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 110V(Min)
- High DC Current Gain
: hFE= 5000(Min) @IC= 3A
- Low Collector Saturation Voltgae-
: VCE(sat)= 2.5V(Max.)@ IC= 5A
- Minimum Lot-to-Lot variations for robust device performance and reliable operation
APPLICATIONS
- Audio，regulator and general...
