Datasheet Details
| Part number | 2SD2401 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 202.50 KB |
| Description | NPN Transistor |
| Datasheet | 2SD2401-INCHANGE.pdf |
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Overview: isc Silicon NPN Darlington Power Transistor.
| Part number | 2SD2401 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 202.50 KB |
| Description | NPN Transistor |
| Datasheet | 2SD2401-INCHANGE.pdf |
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·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 150V(Min) ·High DC Current Gain- : hFE= 5000( Min.) @(IC= 7A, VCE= 4V) ·Low Collector Saturation Voltage- : VCE(sat)= 2.5V(Max)@ (IC= 7A, IB= 7mA) ·plement to Type 2SB1570 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for audio, series regulator and general purpose applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 160 V VCEO Collector-Emitter Voltage 150 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 12 A IB Base Current-Continuous PC Collector Power Dissipation @TC=25℃ TJ Junction Temperature 1 A 150 W 150 ℃ Tstg Storage Temperature -55~150 ℃ 2SD2401 isc website：.iscsemi.
1 isc & iscsemi is registered trademark isc Silicon NPN Darlington Power Transistor ELECTRICAL CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= 30mA ;
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
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2SD2401 | Silicon NPN Transistor | Sanken electric |
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2SD2401 | SILICON POWER TRANSISTOR | SavantIC |
| Part Number | Description |
|---|---|
| 2SD2400 | NPN Transistor |
| 2SD2406 | NPN Transistor |
| 2SD2438 | NPN Transistor |
| 2SD2439 | NPN Transistor |
| 2SD2454 | NPN Transistor |
| 2SD2488 | NPN Transistor |
| 2SD2490 | NPN Transistor |
| 2SD2493 | NPN Transistor |
| 2SD2494 | NPN Transistor |
| 2SD2495 | NPN Transistor |