Inchange Semiconductor 2SD2422
The information contained herein is presented only as a guide for the applications of our products. The products are not designed for use in equipment which require specialized quality and/or reliability, or in equipment which could have applications in hazardous environments, aerospace industry, or medical field.| Part No. | 2SD2422 |
|---|---|
| Datasheet | 2SD2422 Download |
| Manufacturer |  Inchange Semiconductor |
| Description | Silicon NPN Power Transistor |
| Buy | Stock & Price |
DESCRIPTION
●Collector-Emitter Breakdown Voltage- : V(BR)CEO= 100V(Min)●Collector-Emitter Saturation Voltage- : VCE(sat)= 1.5V(Max.) @IC= 3A
●High DC Current Gain : hFE= 1000(Min) @ IC= 2A, VCE= 3V
●Minimum Lot-to-Lot variations for robust device performance and reliable operation
APPLICATIONS
●High power switching applications●Hammer driver,pulse motor driver applications
ABSOLUTE MAXIMUM RATINGS
(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 100 V VCEO Collector-Emitter Voltage 100 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous 7 A ICM Collector Current-Peak Collector Power Dissipation @ TC=25℃ PC Collector Power Dissipation @ Ta=25℃ TJ Junction Temperature 10 A 30 W 2.0 150 ℃ Tstg Storage Temperature Range -55~150 ℃ 2SD2422 isc website： 1 isc & iscsemi is registered trademark isc Silicon NPN Darlington Power TransistorELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Volt...