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2SD2488 Datasheet NPN Transistor

Manufacturer: Inchange Semiconductor

Overview: isc Silicon NPN Darlington Power Transistor Inchange Semiconductor 2SD2488.

General Description

·With TO-3PN package ·DARLINGTON ·High DC current gain ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Audio ,regulator and general purpose Absolute maximum ratings(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 200 V VCEO Collector-Emitter Voltage 200 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 15 A IB Base Current-Continuous PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 1 A 130 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website:.iscsemi.cn isc&iscsemi is registered trademark Inchange Semiconductor isc Silicon NPN Darlington Power Transistor Product Specification 2SD2488 CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-emitter breakdown voltage IC=30mA ;IB=0 VCEsat Collector-emitter saturation voltage IC=10A ;IB=10mA VBEsat Base-emitter saturation voltage IC=10A ;IB=10mA ICBO Collector cut-off current VCB=200V IE=0 IEBO Emitter cut-off current VEB=5V;

IC=0 hFE DC current gain IC=10A ;

VCE=4V Cob Output capacitance IE=0 ;

2SD2488 Distributor