Inchange Semiconductor 2SD2562
The information contained herein is presented only as a guide for the applications of our products. The products are not designed for use in equipment which require specialized quality and/or reliability, or in equipment which could have applications in hazardous environments, aerospace industry, or medical field.| Part No. | 2SD2562 |
|---|---|
| Datasheet | 2SD2562 Download |
| Manufacturer |  Inchange Semiconductor |
| Description | Silicon NPN Darlington Power Transistor |
| Buy | Stock & Price |
DESCRIPTION
●Collector-Emitter Breakdown Voltage- : V(BR)CEO= 150V(Min)●High DC Current Gain- : hFE= 5000( Min.) @(IC= 10A, VCE= 4V)
●Low Collector Saturation Voltage- : VCE(sat)= 2.5V(Max)@ (IC= 10A, IB= 10mA)
●Complement to Type 2SB1649
●Minimum Lot-to-Lot variations for robust device performance and reliable operation
APPLICATIONS
●Designed for series regulator and general purpose applications.ABSOLUTE MAXIMUM RATINGS
(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 150 V VCEO Collector-Emitter Voltage 150 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 15 A IB Base Current-Continuous PC Collector Power Dissipation @TC=25℃ TJ Junction Temperature 1 A 85 W 150 ℃ Tstg Storage Temperature -55~150 ℃ 2SD2562 isc website： 1 isc & iscsemi is registered trademark isc Silicon NPN Darlington Power TransistorELECTRICAL CHARACTERISTICS
Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= 30mA, IB= 0 VCE(...