2SD2586 datasheet by Inchange Semiconductor.
| Part number | 2SD2586 |
|---|---|
| Datasheet | 2SD2586-INCHANGE.pdf |
| File Size | 210.21 KB |
| Manufacturer | Inchange Semiconductor |
| Description | NPN Transistor |
|
|
·High Breakdown Voltage- : 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)EBO Emitter-Base Breakdown Voltage IE= 200mA ; IC= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 3.5A;.
| Brand Logo | Part Number | Description | Other Manufacturers |
|---|---|---|---|
 |
2SD2586 | Silicon NPN Transistor | Toshiba Semiconductor |
 |
2SD2586 | SILICON POWER TRANSISTOR | SavantIC |
View all Inchange Semiconductor datasheets
| Part Number | Description |
|---|---|
| 2SD2581 | NPN Transistor |
| 2SD2500 | NPN Transistor |
| 2SD2539 | NPN Transistor |
| 2SD254 | NPN Transistor |
| 2SD2549 | NPN Transistor |
| 2SD2550 | NPN Transistor |
| 2SD2551 | NPN Transistor |
| 2SD2553 | NPN Transistor |
| 2SD2557 | NPN Transistor |
| 2SD2558 | NPN Transistor |
