2SD2586 Description
·High Breakdown Voltage- : 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)EBO Emitter-Base Breakdown Voltage IE= 200mA ; IC= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 3.5A;.