2SD2593 Overview
·Low Collector Saturation Voltage- : VCE(sat)= 1.2 (Max)@ IC= 3A ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for power amplifier. 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor 2SD2593 TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO Collector-Emitter Breakdown Voltage IC=30mA;.